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MMBT4403
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE FEATURES
PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA Complimentary (NPN) device: MMBT4401
40V
POWER
225mW
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-23 Terminals: Solderable per MIL-STD-750, Method 2026 Approx Weight: 0.008 grams Marking: M3A
Top View
3 Collector
1 BASE 3 COLLECTOR
1 Base
2 Emitter
2 EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Max Power Dissipation (Note 1) Junction and Storage Temperature Range
VCEO VCBO VEBO IC PTOT TJ, TSTG
-40 -40 -5.0 -600 225 -55 to 150
V V V mA mW
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Thermal Resistance , Junction to Ambient (Note 1)
RJ A
556
/W
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. using minimum recommended pad.
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MMBT4403
ELECTRICAL CHARACTERISTICS (TJ = 25C, unless otherwise noted)
PARAMETER SYMBOL Test Condition MIN. TYP. MAX. UNIT
Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current
V(BR)CEO IC=-1.0mA, IB=0 V(BR)CBO IC=-100uA, IE=0 V(BR)EBO IE=-100uA, IC=0 IBEV ICEX VCE=-35V, VEB=-0.4V VCE=-35V, VEB=-0.4V IC=-0.1mA, VCE=-1.0V IC=-1.0mA, VCE=-1.0V
-40 -40 -5.0 30 60 100 100 20 -0.75 200 -
-
-100 -100 300 -0.4 -0.75 -0.95 -1.3 8.5 30 15 20 225 30
V V V nA nA
DC Current Gain
hFE
IC=-10mA, VCE=-1.0V IC=-150mA, VCE=-2.0V IC=-500mA, VCE=-2.0V IC=-150mA, IB=-15 mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-20mA, VCE=-10V, f=100MHz VCB=-5.0V, IE=0, f=1MHz VCB=-0.5V, IC=0, f=1MHz VCC=-30V, VBE=-2.0V, IC=-150mA, IB1=-15mA VCC=-30V, IC=-150mA, IB1=IB2=15mA
-
Collector - Emitter Saturation Voltage
VCE(SAT) VBE(SAT) fT CCBO CEBO td tr ts tf
V
Base - Emitter Saturation Voltage
V
Current-Gain - Bandwidth Product Collector - Base Capacitance Emitter - Base Capacitance Delay Time Rise Time Storage Time Fall Time
MHz pF pF ns ns ns ns
SWITCHING TIME EQUIVALENT TEST CIRCUITS
-30V
-30V
200 < 2ns 0 +2V 1.0K CS < 10pF 1N916
1 to 100us Duty Cycle = 2.0% 0 1N916 +4V <20ns +14V
200 1.0K CS < 10pF
-16V 10 to 100ns Duty Cycle ~ 2.0%
-16V
Fig. 1.
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Turn-On Time
Fig. 2. Turn-Off Time
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MMBT4403
ELECTRICAL CHARACTERISTICS CURVES
400 350 300 hFE 250 200 150 100 0.1 1 10 100 1000 Collector Current, IC (mA) TJ = 25 C TJ = 150 C VCE = 10V
0.900 0.800 0.700
TJ = 25C
TJ = 100 C
VBE(on)
0.600 0.500 0.400 0.300 0.200 0.1 1 10 100 1000 Collector Current, IC (mA) TJ = 100C
TJ =150C
Fig. 3. Typical hFE vs Collector Current
0.500 0.450 0.400 IC/IB = 10
Fig. 4. Typical VBE vs Collector Current
100
CIB (EB)
VCE(sat)
0.300 0.250 0.200 0.150 0.100 0.050 0.000 0.1 1 10 100 1000 Collector Current, IC (mA) TJ = 25C TJ = 150C
Capacitance (pF)
0.350
10 COB (CB)
1 0.1 1 10 100 Reverse Voltage (V)
Fig. 5. Typical VCE (sat) vs Collector Current
Fig. 6. Typical Capacitances vs Reverse Voltage
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MMBT4403
MOUNTING PAD LAYOUT
ORDER INFORMATION
* Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel
LEGAL STATEMENT Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.
REV.0.1-MAR.5.2009
PAGE . 4

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